Crystal oscillator, chip, and electronic device

ABSTRACT

Disclosed are a crystal oscillator, a chip, and an electronic device. The crystal oscillator includes: an oscillating circuit, including: a crystal, an amplification circuit, a first load capacitor, and a second load capacitor, where the first load capacitor and the second load capacitor are respectively connected to a first terminal and a second terminal of the crystal; and a first Miller multiplication circuit, where an input terminal and an output terminal of the first Miller multiplication circuit are respectively connected to two terminals of the first load capacitor, and the first Miller multiplication circuit is configured to increase a first load capacitance of the oscillating circuit, where the first load capacitance is a capacitance between the first terminal of the crystal and the ground. According to this technical solution, an area occupied by the load capacitor as well as circuit costs can be reduced.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of International Application No.PCT/CN2020/114079, filed on Sep. 8, 2020, the disclosure of which ishereby incorporated by reference in its entirety.

TECHNICAL FIELD

Embodiments of the present application relate to the field of electroniccircuits, and more specifically, to a crystal oscillator, a chip, and anelectronic device.

BACKGROUND

A crystal oscillator is a crystal element packaged with a quartz crystaland an oscillating circuit thereof, and can use the piezoelectric effectto provide stable and precise single-frequency oscillations in a stateof resonance, thereby generating a clock frequency signal required by aprocessor, for example, a central processing unit (CPU), to executeinstructions. Therefore, any electronic device containing a processorcontains at least one clock source, that is, necessarily contains acrystal oscillator. The crystal oscillator is used in many electronicproducts. To ensure proper operation of electronic products, performanceof the crystal oscillator is of great significance.

Therefore, how to improve the overall performance of the crystaloscillator is a technical problem to be solved urgently.

SUMMARY

Embodiments of the present application provide a crystal oscillator, achip, and an electronic device, which can improve the overallperformance of the crystal oscillator.

According to a first aspect, a crystal oscillator is provided,including: an oscillating circuit, including: a crystal, anamplification circuit, a first load capacitor, and a second loadcapacitor, where two terminals of the crystal are respectively connectedto an input terminal and an output terminal of the amplificationcircuit, and the first load capacitor and the second load capacitor arerespectively connected to a first terminal and a second terminal of thecrystal; and

a first Miller multiplication circuit, where an input terminal and anoutput terminal of the first Miller multiplication circuit arerespectively connected to two terminals of the first load capacitor, andthe first Miller multiplication circuit is configured to increase afirst load capacitance of the oscillating circuit, where the first loadcapacitance is a capacitance between the first terminal of the crystaland the ground.

According to the technical solution in this embodiment of the presentapplication, a Miller multiplication circuit is connected in parallel totwo terminals of a load capacitor of the crystal oscillator to increasea load capacitance thereof, so that the crystal oscillator has a largeoscillatable transconductance area when starting oscillation, whichimproves the stability of oscillation starting of the crystaloscillator. In addition, an area occupied by the load capacitor as wellas circuit costs can be reduced.

In a possible implementation, the first Miller multiplication circuit isconfigured to increase the first load capacitance to A+1 times acapacitance of the first load capacitor, and A is a gain of the firstMiller multiplication circuit.

In a possible implementation, the first Miller multiplication circuitincludes: a first multiplication transistor and a second multiplicationtransistor, where the first multiplication transistor and the secondmultiplication transistor are connected in series to form an invertingamplification circuit;

a gate and a drain of the first multiplication transistor are connectedto each other, a source of the first multiplication transistor isconnected to a power supply voltage, and the drain of the firstmultiplication transistor is connected to a drain of the secondmultiplication transistor; and

a gate of the second multiplication transistor is the input terminal ofthe first Miller multiplication circuit and is connected to one terminalof the first load capacitor, the drain of the second multiplicationtransistor is the output terminal of the first Miller multiplicationcircuit and is connected to the other terminal of the first loadcapacitor, and a source of the second multiplication transistor isconnected to the ground.

According to the technical solution in this embodiment of the presentapplication, the first multiplication transistor works stably in asaturation state and can provide a stable DC bias for the secondmultiplication transistor. The entire first Miller multiplicationcircuit is easy to control and works in a relatively stable state. Inaddition, the Miller multiplication circuit can further provide a moresuitable gain and multiply the first load capacitance to a more suitablesize range, thereby providing a suitable oscillation-startingtransconductance range for the second oscillating transistor.

In a possible implementation, the crystal oscillator further includes: afirst switch group configured to connect the first Miller multiplicationcircuit and the first load capacitor when the crystal oscillator startsoscillation, and to disconnect the first Miller multiplication circuitand the first load capacitor when the crystal oscillator maintainsoscillation.

According to the technical solution in this embodiment of the presentapplication, a large-capacity load capacitance can be provided when thecrystal starts oscillation, and after the oscillation starting, thecrystal maintains oscillation and a small-capacity load capacitance isprovided to save the power consumption of the crystal oscillator, sothat the crystal oscillator can be applied to more low power applicationscenarios.

In a possible implementation, the first switch group includes: a firstswitch, a second switch, and a third switch, where

the first switch is connected to the gate of the second multiplicationtransistor and one terminal of the first load capacitor, the secondswitch is connected to the drain of the first multiplication transistorand the other terminal of the first load capacitor, and the third switchis connected to the gate of the second multiplication transistor and thepower supply voltage;

when the crystal oscillator starts oscillation, the first switch and thesecond switch are closed, the third switch is opened, and the firstMiller multiplication circuit is connected to the first load capacitorto increase the first load capacitance of the oscillating circuit; and

when the crystal oscillator maintains oscillation, the third switch isclosed, the first switch and the second switch are opened, and the firstload capacitance of the oscillating circuit is equal to the capacitanceof the first load capacitor.

In a possible implementation, the first Miller multiplication circuitfurther includes:

at least one first regulating transistor, where a source and a drain ofeach first regulating transistor in the at least one first regulatingtransistor are respectively connected to the source and the drain of thefirst multiplication transistor, and a gate of each first regulatingtransistor in the at least one first regulating transistor is connectedto a gate control voltage.

In a possible implementation, the first Miller multiplication circuitfurther includes:

at least one first regulating switch, where the at least one firstregulating switch is connected to the at least one first regulatingtransistor in a one-to-one correspondence, and the first regulatingswitch is configured to control whether to connect the first regulatingtransistor to the first multiplication transistor.

In a possible implementation, the at least one first regulating switchis configured to adjust a transconductance of the first multiplicationtransistor, so as to adjust a gain A of the first Miller multiplicationcircuit.

In the foregoing embodiment of the present application, the gain A ofthe first Miller multiplication circuit is adjusted, and the first loadcapacitance in the crystal oscillator is adjusted to an appropriatevalue, so that the crystal oscillator is easy to start oscillation.Meanwhile, a new means is also provided for adjusting the oscillationfrequency of the crystal oscillator.

In a possible implementation, if the at least one first regulatingtransistor is a plurality of first regulating transistors, the pluralityof first regulating transistors are transistors having the samestructure.

In a possible implementation, the first Miller multiplication circuitfurther includes:

at least one second regulating transistor, where a gate, a source, and adrain of each second regulating transistor in the at least one secondregulating transistor are respectively connected to the gate, thesource, and the drain of the second multiplication transistor.

In a possible implementation, the first Miller multiplication circuitfurther includes:

at least one second regulating switch, where the at least one secondregulating switch is connected to the at least one second regulatingtransistor in a one-to-one correspondence, and the second regulatingswitch is configured to control whether to connect the second regulatingtransistor to the second multiplication transistor.

In a possible implementation, the at least one second regulating switchis configured to adjust a transconductance of the second multiplicationtransistor, so as to adjust the gain A of the first Millermultiplication circuit.

In a possible implementation, if the at least one second regulatingtransistor is a plurality of second regulating transistors, theplurality of second regulating transistors are transistors having thesame structure.

In a possible implementation, a structure of the at least one secondregulating transistor is the same as a structure of the secondmultiplication transistor.

In a possible implementation, the amplification circuit includes a firstoscillating transistor, a second oscillating transistor, and a feedbackresistor, where the first oscillating transistor, the second oscillatingtransistor, and the feedback resistor form an inverting amplificationcircuit;

a gate of the first oscillating transistor is connected to a gatecontrol voltage, a drain of the first oscillating transistor isconnected to the second terminal of the crystal, and a source of thefirst oscillating transistor is connected to the power supply voltage;

a gate of the second oscillating transistor is connected to the firstterminal of the crystal, a drain of the second oscillating transistor isconnected to the second terminal of the crystal, and a source of thesecond oscillating transistor is connected to the ground; and

two terminals of the feedback resistor are respectively connected to thetwo terminals of the crystal.

In a possible implementation, a ratio of a width-to-length ratio of thesecond multiplication transistor to a width-to-length ratio of thesecond oscillating transistor is used to adjust the transconductance ofthe second multiplication transistor and the transconductance of thefirst multiplication transistor, so as to adjust the gain A of the firstMiller multiplication circuit.

In a possible implementation, a ratio of a width-to-length ratio of thesecond regulating transistor to a width-to-length ratio of the firstoscillating transistor is used to adjust the transconductance of thefirst multiplication transistor, so as to adjust the gain A of the firstMiller multiplication circuit.

In a possible implementation, the crystal oscillator further includes: asecond Miller multiplication circuit, where an input terminal and anoutput terminal of the second Miller multiplication circuit arerespectively connected to two terminals of the first load capacitor, andthe second Miller multiplication circuit is configured to increase asecond load capacitance of the oscillating circuit, where the secondload capacitance is a capacitance between the second terminal of thecrystal and the ground.

In a possible implementation, a circuit structure of the second Millermultiplication circuit is the same as a circuit structure of the firstMiller multiplication circuit.

According to a second aspect, a chip is provided, including: the crystaloscillator according to the first aspect or any one of the possibleimplementations of the first aspect.

In a possible implementation, the chip is a clock chip, and the clockchip is configured to provide a clock signal.

According to a third aspect, an electronic device is provided,including: the chip according to the second aspect or any one of thepossible implementations of the second aspect.

The foregoing crystal oscillator is used in the electronic device andchip, and the performance of the crystal oscillator is improved, therebyimproving the overall performance of the electronic device and chip

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic structural diagram of a typical crystaloscillator;

FIG. 2 is a root locus diagram of a closed-loop transfer function of acrystal oscillator under different load capacitances;

FIG. 3 is an equivalent circuit diagram of a crystal in FIG. 1;

FIG. 4 is a schematic structural block diagram of a crystal oscillatoraccording to an embodiment of the present application;

FIG. 5 is a structural diagram of a circuit of a crystal oscillatoraccording to an embodiment of the present application;

FIG. 6 is another schematic structural block diagram of another crystaloscillator according to an embodiment of the present application; and

FIG. 7 to FIG. 13 are structural diagrams of circuits of several othercrystal oscillators according to an embodiment of the presentapplication.

DESCRIPTION OF EMBODIMENTS

The embodiments of the present application are described below withreference to the accompanying drawings in the embodiments of the presentapplication.

The embodiments of the present application may be applicable to anelectronic device or an electronic system that includes a processor. Theprocessor may be an integrated circuit chip and has a signal processingcapability. The processor may be a general-purpose processor, a digitalsignal processor (DSP), an application-specific integrated circuit(ASIC), a field-programmable gate array (FPGA) or another programmablelogic device, a discrete gate or transistor logic device, or a discretehardware component. The general-purpose processor may be amicroprocessor, or the processor may be any conventional processor, etc.

It should be understood that the specific examples herein are intendedonly to help persons skilled in the art better understand theembodiments of the present application, rather than limiting theprotection scope of the embodiments of the present application.

It should also be understood that the various implementations describedin this specification may be implemented separately or in combination,which is not limited in the embodiments of the present application.

Unless otherwise specified, all technical and scientific terms used inthe embodiments of the present application have the same meanings asthose generally understood by persons of ordinary skill in the art.Terms used in the present application are only for the purpose ofdescribing the specific embodiments, and are not intended to limit thescope of the present application. The term “and/or” used in the presentapplication includes any and all combinations of one or more relevantlisted items.

FIG. 1 is a schematic diagram of a typical structure of a crystaloscillator 100. The crystal oscillator 100 has a Pierce oscillator (orreferred to as a Pierce crystal oscillator) structure.

As shown in FIG. 1, the crystal oscillator 100 includes a firsttransistor 110, a second transistor 120, a crystal 130, a firstcapacitor 140, a second capacitor 150, and a feedback resistor 160.

A gate of the first transistor 110 is connected to a gate controlvoltage V_(bp), a source of the first transistor is connected to a powersupply voltage V_(cc), a drain of the first transistor 110 is connectedto a drain of the second transistor 120, and the drain of the secondtransistor 120 is connected to the ground. In other words, the firsttransistor 110 and the second transistor 120 form a connection structureof an inverting amplification circuit. The first transistor 110 servesas a current source to supply a bias to the second transistor 120, thefeedback resistor 160 and the second transistor 120 form a negativefeedback to stabilize a DC voltage across V_(a) and V_(b), the firstcapacitor 140 and the second capacitor 150 serve as load capacitors ofthe crystal oscillator 100, and the first transistor 110 and the secondtransistor 120 are configured to provide a transconductance for thecrystal 130 to start and maintain oscillation.

However, the crystal oscillator 100 shown in FIG. 1 has the followingproblems:

A transconductance required by the crystal oscillator 100 to startoscillation is greater than a transconductance required to maintainoscillation, and an excessively large or excessively smalltransconductance will cause the oscillator not to start oscillation.Therefore, the transconductance of the first transistor 110 and thesecond transistor 120, especially the transconductance of the secondtransistor 120, need to be designed in an appropriate interval,otherwise the oscillator cannot start oscillation. There are manyfactors that determine the transconductance interval, one of which isrelated to the load capacitance of the crystal oscillator 100, that is,to the capacitance of the first capacitor 140 and the second capacitor150 in FIG. 1.

In ultra-low power applications, the capacitance of the load capacitors(the first capacitor 140 and the second capacitor 150) of the crystaloscillator 100 is very low, which will cause an oscillatabletransconductance interval of the crystal oscillator 100 to become verysmall, thus posing a challenge to setting a reasonable transconductance.Especially under different processes, temperatures, and voltages, atransconductance deviation can be as high as ±50% or more, causing thecrystal oscillator not to start oscillation, thereby affecting a yieldthereof.

FIG. 2 is a root locus diagram of a closed-loop transfer function of acrystal oscillator under different load capacitances.

Specifically, the root locus diagram is a locus diagram of zero-pole ofa transfer function versus a gain. In the diagram, the abscissa is thereal axis of zero-pole, and the ordinate is the imaginary axis ofzero-pole. When the real axis of the zero-pole is greater than or equalto 0, the crystal oscillator starts oscillation.

It can be seen from FIG. 2 that when a load capacitance is 4 pF, anoscillatable transconductance area of the crystal oscillator is 0.199 μsto 199.5 μs. When a load capacitance is 16 pF, an oscillatabletransconductance area of the crystal oscillator is 1.259 μs to 3162 μs.Therefore, when the load capacitance is increased, the oscillatabletransconductance interval of the crystal oscillator increasessignificantly. Even if there is a transconductance deviation caused bydifferent processes, temperatures, and voltages, the crystal oscillatorcan still start oscillation normally because of a relatively largeoscillatable transconductance interval of the crystal oscillator.

In addition, FIG. 3 is an equivalent circuit diagram of the crystal 130in FIG. 1.

As shown in FIG. 3, the crystal 130 is equivalent to an equivalentcircuit shown by a dashed box in the diagram, including a shuntcapacitor 131, an equivalent capacitor 132, an equivalent inductor 133,and an equivalent resistor 134.

According to the Barkhausen criterion, when an LC resonance circuit isat a resonant frequency, the imaginary part of the overall equivalentimpedance of the circuit is 0, and if the real part is negative at thistime, the LC resonance circuit oscillates. Therefore, as long as it isensured that a negative resistance value of an impedance Z_(C) at aresonant frequency of a circuit viewed from two terminals of the shuntcapacitor 131 is greater than a resistance value R_(S) of the equivalentresistor 134 of the crystal, the crystal oscillator can oscillate.

Specifically, a calculation formula for Z_(C) is as follows:

${{Z_{C}\left( {j\;\omega} \right)} = {\frac{1}{j\;\omega\; C_{3}}\frac{g_{m} + {j\;{\omega\left( {C_{1} + C_{2}} \right)}}}{g_{m} + {j\;{\omega\left( {C_{1} + C_{2} + \frac{C_{1}C_{2}}{C_{3}}} \right)}}}}};$

a calculation formula for the real part of Z_(C) is as follows:

${{Z_{C\_{real}}\left( {j\;\omega} \right)} = {- \frac{g_{m}}{{\omega^{2}C_{1}{C_{2}\left( {\frac{C_{1} + C_{2}}{C_{1}C_{2}} + \frac{1}{C_{3}}} \right)}^{2}} + {g_{m}^{2}\frac{C_{3}^{2}}{C_{1}C_{2}}}}}};$

where C₁ is a capacitance of the first capacitor 140, C₂ is acapacitance of the second capacitor 150, C₃ is a capacitance of theshunt capacitor 131, and g_(m) is a transconductance of the secondtransistor 120.

To make the crystal oscillator start oscillation, as long as anappropriate g_(m) is taken to ensure that a negative resistance value ofthe real part is greater than the resistance value R_(S) of theequivalent resistor 134, a critical oscillation-starting g_(m) of thecrystal oscillator can be obtained by extracting a root of the followingsimultaneous equations.

${\frac{g_{m}}{{\omega^{2}C_{1}{C_{2}\left( {\frac{C_{1} + C_{2}}{C_{1}C_{2}} + \frac{1}{C_{3}}} \right)}^{2}} + {g_{m}^{2}\frac{C_{3}^{2}}{C_{1}C_{2}}}} = R_{S}};$

solve for the above equation, to obtain:

${g_{m} = {\frac{C_{1}C_{2}}{2R_{S}C_{3}^{2}}\left\lbrack {1 \pm \sqrt{1 - {4\omega^{2}R_{S}^{2}{C_{3}^{2}\left( {\frac{C_{3}}{C_{1}} + \frac{C_{3}}{C_{2}} + 1} \right)}^{2}}}} \right\rbrack}};$

perform a first-order Taylor expansion on g_(m) obtained by solving forthe above solution, to obtain an approximate expression thereof asfollows:

$g_{m} \approx {\frac{C_{1}C_{2}}{2R_{S}C_{3}^{2}}{\left\{ {1 \pm \left\lbrack {1 - {2\omega^{2}R_{S}^{2}{C_{3}^{2}\left( {\frac{C_{3}}{C_{1}} + \frac{C_{3}}{C_{2}} + 1} \right)}^{2}}} \right\rbrack} \right\}.}}$

According to the above expression, a minimum value g_(m,min) and amaximum value g_(m,max) of g_(m) can be calculated, and calculationexpressions of the two are as follows:

${g_{m,\min} = {\omega^{2}R_{S}C_{1}{C_{2}\left( {\frac{C_{3}}{C_{1}} + \frac{C_{3}}{C_{2}} + 1} \right)}^{2}}};$$g_{m,\max} = {\frac{C_{1}C_{2}}{R_{S}C_{3}^{2}} - {\omega^{2}R_{S}C_{1}{{C_{2}\left( {\frac{C_{3}}{C_{1}} + \frac{C_{3}}{C_{2}} + 1} \right)}^{2}.}}}$

If C₁ and C₂ are much greater than C₃, G_(m,min) and g_(m,max) can befurther simplified as the following expressions:

g_(m, min ) = ω²R_(S)C₁C₂;$g_{m,\max} = {\frac{C_{1}C_{2}}{R_{S}C_{3}^{2}}.}$

Therefore, a value range of the transconductance g_(m) of the secondtransistor 120 is as follows:

$g_{m,{range}} = {C_{1}{{C_{2}\left( {\frac{1}{R_{S}C_{3}^{2}} - {\omega^{2}R_{S}}} \right)}.}}$

It can be seen from the above expression that, to make the crystaloscillator 100 start oscillation, the value range of transconductanceg_(m) of the second transistor 120 is directly proportional to thecapacitance C₁ of the first capacitor 140 and the capacitance C₂ of thesecond capacitor 150.

It can be seen from the related description of FIG. 2 and FIG. 3 that,as a capacitance of the load capacitor increases, the oscillatabletransconductance interval of the crystal oscillator increases. Toimprove the stability and reliability of oscillation starting of thecrystal oscillator and improve a production yield thereof, it isnecessary to design a large-capacitance load capacitor in the crystaloscillator. However, a large-capacitance load capacitor means a largecapacity area. For circuits such as crystal oscillators dominant by acapacitor area, an increase in the capacitance of the capacitor means arise in circuit costs.

Therefore, to resolve the foregoing problem, in the embodiments of thepresent application, the load capacitance in the crystal oscillator ismultiplied by using the Miller effect. In the case of using a small loadcapacitor, a large load capacitance is obtained by multiplication, sothat a large oscillatable transconductance area can be generated,thereby improving the stability of oscillation starting of the crystaloscillator. In addition, an area occupied by the load capacitor as wellas circuit costs can be reduced, which is conducive to theminiaturization of the crystal oscillator.

FIG. 4 is a schematic structural block diagram of a crystal oscillatoraccording to an embodiment of the present application.

As shown in FIG. 4, the crystal oscillator 200 includes: an oscillatingcircuit and a first Miller multiplication circuit 250, where theoscillating circuit includes an amplification circuit 210, a crystal220, a first load capacitor 230, and a second load capacitor 240.

Optionally, as shown in FIG. 4, the amplification circuit 210 isconnected in parallel to the crystal 220, and the first load capacitor230 and the second load capacitor 240 are respectively connected to afirst terminal and a second terminal of the crystal 220. The firstMiller multiplication circuit 250 is connected in parallel to the firstload capacitor 230. In other words, an input terminal and an outputterminal of the first Miller multiplication circuit are respectivelyconnected to two terminals of the first load capacitor 230.

Optionally, in this embodiment of the present application, theamplification circuit 210 may be an inverting amplification circuit, forexample, an inverting amplification circuit formed by the firsttransistor 110 and the second transistor 120 in the Pierce crystaloscillator shown in FIG. 1. Therefore, the first transistor and thesecond transistor of the amplification circuit 210 may provide atransconductance for crystal oscillation, which is beneficial to thefast oscillation starting of the crystal.

It may be understood that, in addition to the inverting amplificationcircuit in the Pierce crystal oscillator, the amplifier circuit 210 mayalso be other types of amplification circuits in the related art, and aspecific circuit structure of the amplification circuit 210 is notlimited in the embodiments of the present application.

Correspondingly, the crystal 220, the first load capacitor 230, and thesecond load capacitor 240 in this embodiment of the present applicationmay be respectively the crystal 130, the first capacitor 140, and thesecond capacitor 150 in the Pierce crystal oscillator 100 in FIG. 1. Thecircuit structure formed by the oscillating circuit in this embodimentof the present application is the circuit structure of the Piercecrystal oscillator shown in FIG. 1.

On this basis, the first Miller multiplication circuit 250 is connectedin parallel to the first load capacitor 230 to increase a first loadcapacitance of the oscillating circuit, where the first load capacitanceis a capacitance between the first terminal of the crystal 220 and theground.

Optionally, the first Miller multiplication circuit 250 may be aninverting amplification circuit. According to the principle of theMiller effect, in the inverting amplification circuit, a capacitancevalue equivalent to the capacitance between the input and the outputwill be expanded by A+1 times due to the amplification effect of theamplifier, where A is a gain (also referred to as an amplificationfactor) of the inverting amplification circuit. In other words, in thisembodiment of the present application, the first Miller multiplicationcircuit 250 is configured to increase the first load capacitance to A+1times a capacitance of the first load capacitor 230, where A is a gainof the first Miller multiplication circuit 250, and A is a positivenumber.

According to the technical solution in this embodiment of the presentapplication, a Miller multiplication circuit is connected in parallel totwo terminals of a load capacitor of the crystal oscillator to increasea load capacitance thereof, so that the crystal oscillator has a largeoscillatable transconductance area when starting oscillation, whichimproves the stability of oscillation starting of the crystaloscillator. In addition, an area occupied by the load capacitor as wellas circuit costs can be reduced.

With reference to specific examples in FIG. 5 to FIG. 9, the followingdescribes in detail implementations of the crystal oscillator in theembodiments of the present application.

FIG. 5 is a structural diagram of a circuit of a crystal oscillatoraccording to an embodiment of the present application.

As shown in FIG. 5, the amplification circuit 210 may include a firstoscillating transistor 211, a second oscillating transistor 212, and afeedback resistor 213. The first Miller multiplication circuit 250 mayinclude a first multiplication transistor 251 and a secondmultiplication transistor 252, where the two multiplication transistorsare used to form an inverting amplifier, and the first load capacitor230 is connected to an input terminal V_(a) and an output terminalV_(oa) of the inverting amplifier, where the input terminal V_(a) isalso the first terminal of the crystal 220.

Optionally, in the first Miller multiplication circuit, the firstmultiplication transistor 251 is a P-type channel metal-oxidesemiconductor (PMOS) transistor, and the second multiplicationtransistor 252 is a N-type channel metal-oxide semiconductor (NMOS)transistor.

As an example, as shown in FIG. 5, the first Miller multiplicationcircuit 250 is a class-A amplification circuit, where a gate and a drainof the first multiplication transistor 251 are connected to each other,and a source of the first multiplication transistor 251 is connected toa power supply voltage V_(cc), so that the first multiplicationtransistor 251 works in a saturation region. A gate of the secondmultiplication transistor 252 is an input terminal V_(a) of the firstMiller multiplication circuit 250 and is connected to one terminal ofthe first load capacitor 230. A drain of the second multiplicationtransistor 252 is connected to the drain of the first multiplicationtransistor 251, which is the output terminal V_(oa) of the first Millermultiplication circuit 250 and is connected to the other terminal of thefirst load capacitor 230. A source of the second multiplicationtransistor 252 is connected to the ground V_(gd).

In this case, if the gain of the first Miller multiplication circuit 250is A, a capacitance between V_(a) and V_(gd) viewed from the inputterminal V_(a) of the first Miller multiplication circuit 250 to thefirst load capacitor 230, namely, the first load capacitance C′₁ of theoscillating circuit, is multiplied to (1+A)C₁, where C₁ is thecapacitance of the first load capacitor 230.

It may be understood that, in the embodiments of the presentapplication, the first Miller multiplication circuit 250 may also beother types of inverting amplifiers in addition to the invertingamplifier structure shown in FIG. 5. For example, the gate and the drainof the first multiplication transistor 251 are not connected, but isconnected to a bias voltage. For another example, the gate of the firstmultiplication transistor 251 is connected to the gate of the secondmultiplication transistor 252, and is used as the input terminal of thefirst Miller multiplication circuit 250. A specific circuit structure ofthe first Miller multiplication circuit 250 is not limited in thisembodiment of the present application.

Preferably, the first Miller multiplication circuit 250 is designed asthe circuit structure as shown in FIG. 5. In this case, the firstmultiplication transistor 251 works stably in a saturation state and canprovide a stable DC bias for the second multiplication transistor 252.The entire first Miller multiplication circuit 250 is easy to controland works in a relatively stable working state. In addition, the firstMiller multiplication circuit can further provide a more suitable gainand multiply the first load capacitance to a more suitable size range,thereby providing a suitable oscillation-starting transconductance rangefor the second oscillating transistor 212.

In the embodiments of the present application as shown in FIG. 4 andFIG. 5, the crystal oscillator 200 includes only the first Millermultiplication circuit 250, which is connected in parallel to twoterminals of the first load capacitor 230 and is configured to multiplythe first load capacitance.

FIG. 6 and FIG. 7 are respectively a structural block diagram and aschematic structural diagram of circuits of two other crystaloscillators 200 according to an embodiment of the present application.

As shown in FIG. 6 and FIG. 7, the crystal oscillator 200 furtherincludes: a second Miller multiplication circuit 260, which is connectedin parallel to two terminals of the second load capacitor 240 and isconfigured to multiply the second load capacitance, where the secondload capacitance is a capacitance between the second terminal of thecrystal 220 and the ground.

It may be understood that, for related technical solutions of the secondMiller multiplication circuit 260, reference may be made to the relateddescription of the foregoing first Miller multiplication circuit 250,and details are not described herein again.

As an example, as shown in FIG. 7, a circuit structure of the secondMiller multiplication circuit 260 is the same as the circuit structureof the first Miller multiplication circuit 250 shown in FIG. 5, andincludes an inverting amplifier formed by a third multiplicationtransistor 261 and a fourth multiplication transistor 262. The secondload capacitor 240 is connected between an input terminal V_(b) and anoutput terminal V_(ob) of the inverting amplifier, and the inputterminal V_(b) is also the second terminal of the crystal 220.

It may further be understood that, in addition to the circuit structureshown in FIG. 7, the second Miller multiplication circuit 260 may alsobe other types of inverting amplification circuits, and a specificcircuit type and circuit structure may be the same as or different fromthat of the first Miller multiplication circuit 250, which is notspecifically limited in the embodiments of the present application.

In the foregoing embodiment, the load capacitance of the crystaloscillator is multiplied by using the Miller multiplication circuit, soas to improve the stability of oscillation starting of the crystaloscillator. However, after the crystal starts oscillation, thecapacitance to maintain the crystal oscillation is often less than acapacitance required to start the oscillation. Especially in low powerapplication scenarios, only a small load capacitance is required. Inthis case, a capacitance in the load capacitance reserved for thestability of oscillation starting will be wasted.

Based on this problem, further, an embodiment of the present applicationprovides a crystal oscillator including a switch unit group, which canprovide a large-capacity load capacitance when the crystal startsoscillation. After the oscillation starting, the crystal maintainsoscillation and a small-capacity load capacitance is provided to reducethe power consumption of the crystal oscillator, so that the crystaloscillator can be applied to more low power application scenarios.

Optionally, the crystal oscillator 200 may include: a first switch groupconfigured to connect the first Miller multiplication circuit and thefirst load capacitor when the crystal oscillator starts oscillation, andto disconnect the first Miller multiplication circuit and the first loadcapacitor when the crystal oscillator maintains oscillation.

Based on the embodiment of the present application shown in FIG. 5, FIG.8 is a schematic structural diagram of a circuit of another crystaloscillator 200.

As shown in FIG. 8, in this embodiment of the present application, thefirst switch group in the crystal oscillator 200 includes: a firstswitch 253, a second switch 254, and a third switch 255.

The first switch 253 is connected to the gate of the secondmultiplication transistor 252 and one terminal (V_(a)) of the first loadcapacitor 230, the second switch 254 is connected to the drain of thefirst multiplication transistor 251 and the other terminal (V_(oa)) ofthe first load capacitor 230, and the third switch 255 is connected tothe gate of the second multiplication transistor 252 and the powersupply voltage (V_(cc)).

When the first switch 253 and the second switch 254 are both closed, andthe third switch 255 is opened, the first load capacitor 230 isconnected between the input terminal and the output terminal of thefirst Miller multiplication circuit 250, to multiply the first loadcapacitance.

When the third switch 255 is closed, and the first switch 253 and thesecond switch 254 are both opened, the second multiplication transistor252 is turned on, and one terminal (V_(oa)) of the first load capacitor230 is grounded. In this case, the first load capacitance is thecapacitance of the first load capacitor 230.

Optionally, in this embodiment of the present application, a state ofeach switch in the first switch group may be controlled by using acontrol unit, where at the same time, a switch state of the first switch253 is consistent with that of the second switch 254, and is reverse tothat of the third switch 255.

It may be understood that the number of and the positions of theswitches in the first switch group in FIG. 8 are merely exemplarydescriptions. In addition to the positions shown in FIG. 8, the switchesmay also be located at other positions in the circuit. For example, thesecond switch 254 may be configured to connect the source of the firstmultiplication transistor 251 and the power supply voltage V_(cc),and/or the third switch 255 is configured to connect the gate of thesecond multiplication transistor 252 and another power supply voltage,and so on. The embodiment of the present application does notspecifically limit the positions of the switches in the first switchgroup, and is intended to control whether the first Millermultiplication circuit 250 is connected to the first load capacitor 230by using the first switch group.

Optionally, the crystal oscillator 200 may further include: a secondswitch group configured to connect the second Miller multiplicationcircuit and the second load capacitor when the crystal oscillator startsoscillation, and to disconnect the second Miller multiplication circuitand the second load capacitor when the crystal oscillator maintainsoscillation.

Based on the embodiment of the present application shown in FIG. 7, FIG.9 is a schematic structural diagram of a circuit of another crystaloscillator 200.

As shown in FIG. 9, in this embodiment of the present application, thesecond switch group in the crystal oscillator 200 includes: a fourthswitch 263, a fifth switch 264, and a sixth switch 265.

The fourth switch 263 is connected to a gate of the fourthmultiplication transistor 262 and one terminal (V_(b)) of the secondload capacitor 240, and the fifth switch 264 is connected to a drain ofthe third multiplication transistor 261 and the other terminal (V_(ob))of the second load capacitor 240. The sixth switch 265 is connected tothe gate of the fourth multiplication transistor 262 and the powersupply voltage V_(cc).

When the fourth switch 263 and the fifth switch 264 are both closed, andthe sixth switch 265 is opened, the second load capacitor 240 isconnected between the input terminal and the output terminal of thesecond Miller multiplication circuit 260, to multiply the second loadcapacitance.

When the sixth switch 265 is closed, and the fourth switch 263 and thefifth switch 264 are both opened, the fourth multiplication transistor262 is turned on, and one terminal (V_(ob)) of the second load capacitor240 is grounded. In this case, the second load capacitance is thecapacitance of the second load capacitor 240.

Optionally, in this embodiment of the present application, a state ofeach switch in the second switch group may be controlled by using thecontrol unit, where at the same time, a switch state of the fourthswitch 263 is consistent with that of the fifth switch 264, and isreverse to that of the sixth switch 265.

Further, in this embodiment of the present application, at the sametime, the control unit may control the first switch 253, the secondswitch 254, the fourth switch 263, and the fifth switch 264 to be in thesame switch state, and control the third switch 255 and the sixth switch265 to be in the same switch state.

Similarly, the number of and the positions of the switches in the secondswitch group in FIG. 9 are merely exemplary descriptions. In addition tothe positions shown in FIG. 9, the switches may also be located at otherpositions in the circuit. For example, the fifth switch 264 may beconfigured to connect the source of the third multiplication transistor261 and the power supply voltage V_(cc), and/or the sixth switch 265 isconfigured to connect the gate of the fourth multiplication transistor262 and another power supply voltage, and so on. The embodiment of theapplication does not specifically limit the positions of the switches inthe second switch group.

According to the embodiment described above, the first load capacitor230 may be connected in parallel to the first Miller multiplicationcircuit 250, to multiply the first load capacitance, and/or the secondload capacitor 240 may be connected in parallel to the second Millermultiplication circuit 260, to multiply the second load capacitance.Specifically, a multiplication amount of the load capacitance is relatedto a gain of the Miller multiplication circuit.

In the foregoing embodiment, the first Miller multiplication circuit 250in FIG. 7 to FIG. 9 is taken as an example, and a calculation formulafor the gain thereof is as follows:

${A = {- \frac{g_{m\; 52}}{g_{m\; 51}}}};$

where g_(m51) and g_(m52) are respectively a transconductance of thefirst multiplication transistor 251 and a transconductance of the secondmultiplication transistor 252, and the multiplication amount of the loadcapacitance may be adjusted by adjusting g_(m51) and g_(m52).

Specifically, a calculation formula for the transconductance g_(m51) ofthe first multiplication transistor 251 is as follows:

${g_{m\; 51} = \sqrt{2\mu\; C_{ox}\frac{W}{L}I_{d\; 51}}};$

where μ is an electron mobility, C_(ox) is a gate oxide capacitance ofthe first multiplication transistor 251, W/L is a width-to-length ratioof the first multiplication transistor 251, and I_(d51) is a draincurrent of the first multiplication transistor 251.

Specifically, the second multiplication transistor 252 is imaged to thesecond oscillating transistor 212 in the amplification circuit, andcalculation formulas for the drain current I_(d52) and thetransconductance g_(m52) of the second multiplication transistor 252 areas follows:

I _(d52) =NI _(B), and g _(m52) =Ng _(m12)

where N is a ratio of a width-to-length ratio of the secondmultiplication transistor 252 to a width-to-length ratio of the secondoscillating transistor 212, I_(B) is a drain current of the secondoscillating transistor 212 and also a drain current of the firstoscillating transistor 211, and g_(m12) is a transconductance of thesecond oscillating transistor 212.

Therefore, it can be seen from the above formulas that thetransconductance of the first multiplication transistor 251 may beadjusted by adjusting process conditions such as a width-to-length ratioof the first multiplication transistor 251; and/or the transconductanceof the first multiplication transistor 251 may be adjusted by adjustingthe drain current of the first multiplication transistor 251, therebyadjusting the gain of the first Miller multiplication circuit 250.

Alternatively, the transconductance of the second multiplicationtransistor 252 may be adjusted by adjusting process conditions such as awidth-to-length ratio of the second multiplication transistor 252;and/or the transconductance of the second multiplication transistor 252may be adjusted by adjusting the drain current of the secondmultiplication transistor 252, thereby adjusting the gain of the firstMiller multiplication circuit 250.

It may be understood that the circuit structure of the second Millermultiplication circuit 260 shown in FIG. 7 and FIG. 9 is consistent withthe circuit structure of the first Miller multiplication circuit 250.For a calculation method and an adjustment method of the gain, referencemay be made to the adjustment method for the first Miller multiplicationcircuit 250 in the context, and details are not described herein again.

With reference to FIG. 10 to FIG. 12, the following describes thecircuit structure of the first Miller multiplication circuit 250 with anadjustable gain.

(1) In a first embodiment:

the transconductance g_(m52) of the second multiplication transistor 252may be adjusted in a design and manufacturing stage by adjusting theforegoing N, namely, the ratio of the width-to-length ratio of thesecond multiplication transistor 252 to the width-to-length ratio of thesecond oscillating transistor 212, thereby adjusting the gain A of thefirst Miller multiplication circuit 250.

(2) Further, in a second embodiment:

the transconductance g_(m52) of the second multiplication transistor 252connected in parallel to the transistor may be adjusted in a practicaluse stage by connecting at least one transistor in parallel to thesecond multiplication transistor 252 and by adjusting the number oftransistors connected in parallel, thereby adjusting the gain A of thefirst Miller multiplication circuit 250.

As an example, FIG. 10 is a schematic structural diagram of a circuit ofanother crystal oscillator 200 according to an embodiment.

As shown in FIG. 10, in this embodiment of the present application, thefirst Miller multiplication circuit 250 further includes:

n second regulating transistors (2521 to 252 n), where a gate, a source,and a drain of each second regulating transistor in the n secondregulating transistors are respectively connected to the gate, thesource, and the drain of the second multiplication transistor 252, wheren is a positive integer.

Optionally, the first Miller multiplication circuit 250 furtherincludes: n second regulating switches (2511 to 251 n), where the nsecond regulating switches are connected to the n second regulatingtransistors in a one-to-one correspondence, and the second regulatingswitches are configured to control whether to connect the secondregulating transistors to the second multiplication transistor 252.

As an example, as shown in FIG. 10, the n second regulating switches areconnected to drains of the n second regulating transistors and oneterminal (V_(oa)) of the first load capacitor 230 in a one-to-onecorrespondence.

Optionally, the n second regulating transistors (2521 to 252 n) may allbe NMOS transistors. Further, then second regulating transistors may betransistors having the same structure. Further, the n second regulatingtransistors may be transistors having the same structure as the secondmultiplication transistor 252. By using the implementation, the draincurrent I_(d52) and the transconductance g_(m52) of the secondmultiplication transistor 252 following the second regulatingtransistors can be adjusted more conveniently, thereby adjusting thegain A of the first Miller multiplication circuit 250.

If the n second regulating transistors (2521 to 252 n) are transistorshaving the same structure as the second multiplication transistor 252,calculation formulas for the drain current I_(d52) and thetransconductance g_(m52) of the second multiplication transistor 252after being connected to the second regulating transistors in thecircuit structure shown in FIG. 10 are as follows:

I _(d52) =iNI _(B), and g _(m52) =iNg _(m12);

where i denotes the number of second regulating transistors connected tothe second multiplication transistor 252, 1≤i≤n, and i is a positiveinteger. N is a ratio of a width-to-length ratio of the secondmultiplication transistor 252 to a width-to-length ratio of the secondoscillating transistor 212, I_(B) is a drain current of the secondoscillating transistor 212, and g_(m12) is a transconductance of thesecond oscillating transistor 212.

In a practical application process, one or more parameters of i and Nmay be adjusted, so as to adjust the transconductance g_(m52) of thesecond multiplication transistor 252 connected in parallel to thetransistor.

(3) In a third embodiment:

the transconductance g_(m51) of the first multiplication transistor 251may be adjusted by adjusting the drain current I_(d51) of the firstmultiplication transistor 251, thereby adjusting the gain A of the firstMiller multiplication circuit 250.

As an example, FIG. 11 is a schematic structural diagram of a circuit ofanother crystal oscillator 200 according to an embodiment.

As shown in FIG. 11, in this embodiment of the present application, thefirst Miller multiplication circuit 250 further includes:

m first regulating transistors (2531 to 253 m), where a source and adrain of each first regulating transistor in the m first regulatingtransistors are respectively connected to the source and the drain ofthe first multiplication transistor 251, and a gate of each firstregulating transistor in the m first regulating transistors is connectedto a gate control voltage V_(bp), where m is a positive integer.

Optionally, the first Miller multiplication circuit 250 furtherincludes:

m first regulating switches (2541 to 254 m), where the m firstregulating switches are connected to the m regulating transistors in aone-to-one correspondence, and the first regulating switches areconfigured to control whether to connect the first regulatingtransistors to the first multiplication transistor 251.

As an example, as shown in FIG. 11, the m first regulating switches areconnected to drains of the m first regulating transistors and the drainof the first multiplication transistor 251 in a one-to-onecorrespondence.

Optionally, the m first regulating transistors are all PMOS transistors,and further, the m first regulating transistors may be transistorshaving the same structure.

If the m first regulating transistors (2531 to 253 m) are transistorshaving the same structure, and a drain current of each first regulatingtransistor is I_(d53), a calculation formula for the drain I_(d51) ofthe first multiplication transistor 251 in the circuit structure shownin FIG. 11 is as follows:

I _(d51) =I _(d52) −jI _(d53);

where I_(d52)=NI_(B), N is a ratio of a width-to-length ratio of thesecond multiplication transistor 252 to a width-to-length ratio of thesecond oscillating transistor 212, I_(B) is a drain current of thesecond oscillating transistor 212, j denotes the number of firstregulating transistors connected in parallel to the first multiplicationtransistor 251, 1≤j≤m, and j is a positive integer.

Further, if the m first regulating transistors (2531 to 253 m) aretransistors having the same structure, and a ratio of a width-to-lengthratio of each first regulating transistor to a width-to-length ratio ofthe first oscillating transistor 211 is M, calculation formulas for thedrain current I_(d53) of the first regulating transistor, and the drainI_(d51) and the transconductance g_(m51) of the first multiplicationtransistor 251 are as follows:

${I_{d\; 53} = {MI}_{B}},{I_{d\; 51} = {{NI}_{B} - {jMI}_{B}}},{{{and}\mspace{14mu} g_{m\; 51}} = {\sqrt{2\mu\; C_{ox}\frac{W}{L}\left( {N - {jM}} \right)I_{B}}.}}$

It can be seen from the foregoing formulas that in a practicalapplication process, one or more parameters of j, M, and N may beadjusted, so as to adjust the transconductance g_(m51) of the firstmultiplication transistor 251.

(4) In a fourth embodiment:

the technical solutions of the second and third embodiments describedabove are combined, the transconductance g_(m52) of the secondmultiplication transistor 252 may be adjusted in a practical use stageby controlling the number of second regulating transistors connected inparallel to the second multiplication transistor 252, and thetransconductance g_(m51) of the first multiplication transistor 251 maybe adjusted by adjusting the drain current I_(d51) of the firstmultiplication transistor 251, thereby adjusting the gain A of the firstMiller multiplication circuit 250.

As an example, FIG. 12 is a schematic structural diagram of a circuit ofanother crystal oscillator 200 according to an embodiment.

As shown in FIG. 12, in this embodiment of the present application, thefirst Miller multiplication circuit 250 further includes: m firstregulating transistors and m first regulating switches, and n secondregulating transistors and n second regulating switches. For the m firstregulating transistors and the m first regulating switches, and the nsecond regulating transistors and the n second regulating switches,reference may be made to the related description of FIG. 10 and FIG. 11above, and details are not described herein again.

In the circuit structure shown in FIG. 12, calculation formulas for thedrain current I_(d52) and the transconductance g_(m52) of the secondmultiplication transistor 252 are as follows:

I _(d52) =iNI _(B), and g _(m52) =iNg _(m12);

where i denotes the number of second regulating transistors connected tothe second multiplication transistor 252, 1≤i≤n, i is a positiveinteger, N is a ratio of a width-to-length ratio of the secondmultiplication transistor 252 to a width-to-length ratio of the secondoscillating transistor 212, I_(B) is a drain current of the secondoscillating transistor 212, and g_(m12) is a transconductance of thesecond oscillating transistor 212.

Calculation formulas for the drain I_(d51) and the transconductanceg_(m51) of the first multiplication transistor 251 are as follows:

${I_{d\; 51} = {{iNI}_{B} - {jMI}_{B}}},{{{{and}\mspace{14mu} g_{m\; 51}} = \sqrt{2\mu\; C_{ox}\frac{W}{L}\left( {{iN} - {jM}} \right)I_{B}}};}$

where j denotes the number of first regulating transistors connected tothe first multiplication transistor 251, 1≤j≤m, and j is a positiveinteger. M is a ratio of a width-to-length ratio of the secondregulating transistor to a width-to-length ratio of the firstoscillating transistor 211.

It can be seen from the foregoing formulas that in a practicalapplication process, one or more parameters of i, j, M, and N may becontrolled to adjust the transconductance g_(m52) of the secondmultiplication transistor 252 and the transconductance g_(m51) of thefirst multiplication transistor 251, so as to adjust the gain A of thefirst Miller multiplication circuit 250.

In the foregoing embodiment of the present application, the gain A ofthe first Miller multiplication circuit 250 is adjusted, and the firstload capacitance in the crystal oscillator is adjusted to an appropriatevalue, so that the crystal oscillator is easy to start oscillation.Meanwhile, a new means is also provided for adjusting the oscillationfrequency of the crystal oscillator.

In combination with the circuit structure of the first Millermultiplication circuit 250 with an adjustable gain in FIG. 10 to FIG. 12above, it may be understood that the circuit structure of the secondMiller multiplication circuit 260 may be consistent with any circuitstructure of the first Miller multiplication circuit 250 describedabove.

As an example, FIG. 13 is a schematic diagram of a circuit structure ofa preferred crystal oscillator 200 according to the present application.

As shown in FIG. 13, the crystal oscillator 200 includes a first Millermultiplication circuit 250 and a second Miller multiplication circuit260, where the circuit structure of the first Miller multiplicationcircuit 250 is consistent with that of the first Miller multiplicationcircuit 250 in FIG. 12, and the circuit structure of the second Millermultiplication circuit 260 is imaged to the first Miller multiplicationcircuit 250.

Specifically, as shown in FIG. 13, the second Miller multiplicationcircuit 260 may include: n third regulating switches (2611 to 261 n) andn third regulating transistors (2621 to 262 n).

Optionally, the n third regulating transistors (2621 to 262 n) are allNMOS transistors. Further, then third regulating transistors may betransistors having the same structure. Further, the n third regulatingtransistors may be transistors having the same structure as the fourthmultiplication transistor 262.

Optionally, the second Miller multiplication circuit 260 may furtherinclude: m fourth regulating switches (2641 to 264 m) and m fourthregulating transistors (2631 to 263 m).

Optionally, the m fourth regulating transistors are all PMOStransistors, and further, the m fourth regulating transistors may betransistors having the same structure.

It may be understood that, in this embodiment of the presentapplication, for related technical solutions of the regulating switchesand the regulating transistors in the second Miller multiplicationcircuit 260, reference may be made to the foregoing related descriptionof the regulating switches and the regulating transistors in the firstMiller multiplication circuit 250. For an adjustment method for the gainof the second Miller multiplication circuit 260, reference may also bemade to the foregoing adjustment method for the gain of the first Millermultiplication circuit 250. Details are not described herein again.

It may further be understood that, in the embodiment shown in FIG. 13,the number of third regulating transistors and the third regulatingswitches includes but is not limited to n, and the number of fourthregulating transistors and the fourth regulating switches includes butis not limited to m, which is not specifically limited in thisembodiment of the present application.

Moreover, the second Miller multiplication circuit 260 in FIG. 13 isimaged to the first Miller multiplication circuit 250 in FIG. 12. Inaddition, the second Miller multiplication circuit 260 may also beimaged to the first Miller multiplication circuit 250 in FIG. 10 or FIG.11. In the crystal oscillator 200, the structures of the first Millermultiplication circuit 250 and the second Miller multiplication circuit260 may be the same or different, which is not specifically limited inthis embodiment of the present application either.

For example, if the structures of the first Miller multiplicationcircuit 250 and the second Miller multiplication circuit 260 aredifferent, the first Miller multiplication circuit 250 may have thecircuit structure shown in FIG. 10, and the second Miller multiplicationcircuit 260 may be imaged to the circuit structure shown in FIG. 11 orFIG. 12. If the structures of the first Miller multiplication circuit250 and the second Miller multiplication circuit 260 are the same, thefirst Miller multiplication circuit 250 has the circuit structure shownin FIG. 10, and the second Miller multiplication circuit 260 is imagedto the circuit structure shown in FIG. 10. Alternatively, the firstMiller multiplication circuit 250 is the circuit structure shown in FIG.11, and the second Miller multiplication circuit 260 is imaged to thecircuit structure shown in FIG. 11.

An embodiment of the present application further provides a chip,including the crystal oscillator according to the various embodiments ofthe present application.

In some possible implementations, the chip may be a clock chip, forexample a real time clock (RTC) chip, and the clock chip may provide aclock signal for other types of chips, for example, a processor.

An embodiment of the present application further provides an electronicdevice, and the electronic device includes: the chip according to theforegoing embodiment.

As an example rather than a limitation, the electronic device in theembodiment of the present application may be any device that requires aclock signal, for example, a portable or mobile computing device such asa terminal device, a mobile phone, a tablet computer, a notebookcomputer, a desktop computer, a game device, an in-vehicle electronicdevice, or a wearable smart device, and other electronic devices such asan electronic database and an automobile.

It should be noted that, on the premise of no conflict, the embodimentsand/or the technical features thereof described in the presentapplication may be arbitrarily combined with each other, and thetechnical solutions obtained after combination shall also fall withinthe protection scope of the present application.

It should be understood that the specific examples in the embodiments ofthe present application are intended only to help persons skilled in theart better understand the embodiments of the present application, ratherthan limiting the scope of the embodiments of the present application.Persons skilled in the art can make various improvements andmodifications on the basis of the foregoing embodiments, all of whichshall fall within the protection scope of the present application.

The foregoing descriptions are merely specific implementations of thepresent application, but the protection scope of the present applicationis not limited thereto. Any variation or replacement readily figured outby persons skilled in the art within the technical scope disclosed inthe present application shall fall within the protection scope of thepresent application. Therefore, the protection scope of the presentapplication shall be subject to the protection scope of the claims

What is claimed is:
 1. A crystal oscillator, comprising: an oscillatingcircuit, comprising: a crystal, an amplification circuit, a first loadcapacitor, and a second load capacitor, wherein two terminals of thecrystal are respectively connected to an input terminal and an outputterminal of the amplification circuit, and the first load capacitor andthe second load capacitor are respectively connected to a first terminaland a second terminal of the crystal; and a first Miller multiplicationcircuit, wherein an input terminal and an output terminal of the firstMiller multiplication circuit are respectively connected to twoterminals of the first load capacitor, and the first Millermultiplication circuit is configured to increase a first loadcapacitance of the oscillating circuit, wherein the first loadcapacitance is a capacitance between the first terminal of the crystaland the ground.
 2. The crystal oscillator according to claim 1, whereinthe first Miller multiplication circuit is configured to increase thefirst load capacitance to A+1 times a capacitance of the first loadcapacitor, and A is a gain of the first Miller multiplication circuit.3. The crystal oscillator according to claim 2, wherein the first Millermultiplication circuit comprises: a first multiplication transistor anda second multiplication transistor, wherein the first multiplicationtransistor and the second multiplication transistor are connected inseries to form an inverting amplification circuit; a gate and a drain ofthe first multiplication transistor are connected to each other, asource of the first multiplication transistor is connected to a powersupply voltage, and the drain of the first multiplication transistor isconnected to a drain of the second multiplication transistor; and a gateof the second multiplication transistor is the input terminal of thefirst Miller multiplication circuit and is connected to one terminal ofthe first load capacitor, the drain of the second multiplicationtransistor is the output terminal of the first Miller multiplicationcircuit and is connected to the other terminal of the first loadcapacitor, and a source of the second multiplication transistor isconnected to the ground.
 4. The crystal oscillator according to claim 1,further comprising: a first switch group configured to connect the firstMiller multiplication circuit and the first load capacitor when thecrystal oscillator starts oscillation, and to disconnect the firstMiller multiplication circuit and the first load capacitor when thecrystal oscillator maintains oscillation.
 5. The crystal oscillatoraccording to claim 4, wherein the first switch group comprises: a firstswitch, a second switch, and a third switch, wherein the first switch isconnected to the gate of the second multiplication transistor and oneterminal of the first load capacitor, the second switch is connected tothe drain of the first multiplication transistor and the other terminalof the first load capacitor, and the third switch is connected to thegate of the second multiplication transistor and the power supplyvoltage; when the crystal oscillator starts oscillation, the firstswitch and the second switch are closed, the third switch is opened, andthe first Miller multiplication circuit is connected to the first loadcapacitor to increase the first load capacitance of the oscillatingcircuit; and when the crystal oscillator maintains oscillation, thethird switch is closed, the first switch and the second switch areopened, and the first load capacitance of the oscillating circuit isequal to the capacitance of the first load capacitor.
 6. The crystaloscillator according to claim 3, wherein the first Miller multiplicationcircuit further comprises: at least one first regulating transistor,wherein a source and a drain of each first regulating transistor in theat least one first regulating transistor are respectively connected tothe source and the drain of the first multiplication transistor, and agate of each first regulating transistor in the at least one firstregulating transistor is connected to a gate control voltage.
 7. Thecrystal oscillator according to claim 6, wherein the first Millermultiplication circuit further comprises: at least one first regulatingswitch, wherein the at least one first regulating switch is connected tothe at least one first regulating transistor in a one-to-onecorrespondence, and the first regulating switch is configured to controlwhether to connect the first regulating transistor to the firstmultiplication transistor; and the at least one first regulating switchis configured to adjust a transconductance of the first multiplicationtransistor, so as to adjust a gain A of the first Miller multiplicationcircuit.
 8. The crystal oscillator according to claim 6, wherein if theat least one first regulating transistor is a plurality of firstregulating transistors, the plurality of first regulating transistorsare transistors having the same structure.
 9. The crystal oscillatoraccording to claim 3, wherein the first Miller multiplication circuitfurther comprises: at least one second regulating transistor, wherein agate, a source, and a drain of each second regulating transistor in theat least one second regulating transistor are respectively connected tothe gate, the source, and the drain of the second multiplicationtransistor.
 10. The crystal oscillator according to claim 9, wherein thefirst Miller multiplication circuit further comprises: at least onesecond regulating switch, wherein the at least one second regulatingswitch is connected to the at least one second regulating transistor ina one-to-one correspondence, and the second regulating switch isconfigured to control whether to connect the second regulatingtransistor to the second multiplication transistor; and the at least onesecond regulating switch is configured to adjust a transconductance ofthe second multiplication transistor, so as to adjust the gain A of thefirst Miller multiplication circuit.
 11. The crystal oscillatoraccording to claim 9, wherein if the at least one second regulatingtransistor is a plurality of second regulating transistors, theplurality of second regulating transistors are transistors having thesame structure.
 12. The crystal oscillator according to claim 11,wherein a structure of the at least one second regulating transistor isthe same as a structure of the second multiplication transistor.
 13. Thecrystal oscillator according to claim 3, wherein the amplificationcircuit comprises a first oscillating transistor, a second oscillatingtransistor, and a feedback resistor, wherein a gate of the firstoscillating transistor is connected to a gate control voltage, a drainof the first oscillating transistor is connected to the second terminalof the crystal, and a source of the first oscillating transistor isconnected to the power supply voltage; a gate of the second oscillatingtransistor is connected to the first terminal of the crystal, a drain ofthe second oscillating transistor is connected to the second terminal ofthe crystal, and a source of the second oscillating transistor isconnected to the ground; and two terminals of the feedback resistor arerespectively connected to the two terminals of the crystal.
 14. Thecrystal oscillator according to claim 13, wherein a ratio of awidth-to-length ratio of the second multiplication transistor to awidth-to-length ratio of the second oscillating transistor is used toadjust the transconductance of the second multiplication transistor andthe transconductance of the first multiplication transistor, so as toadjust the gain A of the first Miller multiplication circuit.
 15. Thecrystal oscillator according to claim 13, wherein a ratio of awidth-to-length ratio of the second regulating transistor to awidth-to-length ratio of the first oscillating transistor is used toadjust the transconductance of the first multiplication transistor, soas to adjust the gain A of the first Miller multiplication circuit. 16.The crystal oscillator according to claim 1, further comprising: asecond Miller multiplication circuit, wherein an input terminal and anoutput terminal of the second Miller multiplication circuit arerespectively connected to two terminals of the first load capacitor, andthe second Miller multiplication circuit is configured to increase asecond load capacitance of the oscillating circuit, wherein the secondload capacitance is a capacitance between the second terminal of thecrystal and the ground.
 17. The crystal oscillator according to claim 1,wherein a circuit structure of the second Miller multiplication circuitis the same as a circuit structure of the first Miller multiplicationcircuit.
 18. A chip, comprising: the crystal oscillator according toclaim
 1. 19. The chip according to claim 18, wherein the chip is a clockchip, and the clock chip is configured to provide a clock signal.
 20. Anelectronic device, comprising: the chip according to claim 19.